3M™ Trizact™ Polishing Pad HT-315-E TDSContact a Sales Rep
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3M™ Trizact™ Composite Slurry Polishing Pad HT-315-E
- 3M Product Number HT-315-E
- 3M ID B5005408002
Details
Highlights
- Effective fine lapping for ultra-hard substrates such as silicon carbide (SiC) and ceramics
- Improved total thickness variation (TTV), removal rates and good surface finish compared to the copper platen process when used with 3M™ Trizact™ Composite Slurry, a good option for fine lapping/pre-CMP step
- Alternative to copper platen process with no need to re-groove copper platen and no copper in polishing waste
- Potential for improved productivity when using double-sided process compared to single-sided copper platen process
- Easy to use and install with peel-and-stick pressure-sensitive adhesive (PSA)
- Good surface finish, a good option for fine lapping/pre-CMP step
- High removal rate
- Fine lapping for silicon carbide, zirconia (ZrO2), glass, silicon oxide and silicon materials
- Compatible with either single-sided or dual-sided lapping tools
3M™ Trizact™ Composite Slurry Polishing Pad HT-315-E is a microreplicated composite slurry lapping and polishing pad used for finishing ultra-hard substrates, such as silicon carbide and ceramics.
A good option for the fine lapping/pre-CMP step, Trizact composite slurry polishing pad HT-315-E produces a good surface finish with high removal rates when combined with a 3M™ Trizact™ Composite Slurry. This pad is an alternative to the common copper composite platen and diamond slurry process. It may be adhered to typical single- or double-sided lapping platens.
Typical properties
| Application | Polishing, Finishing, Scratch Removal, Lapping, Pre-CMP |
| Product Usage | Ultra-hard Substrates, Semiconductor Wafers |
| Substrate | Sapphire, Silicon Aluminum, Silicon Carbide, Silicon Nitride, Gallium Arsenide, Gallium Nitride, Lithium Tantalate |
Resources
Data Sheets
(PDF, 134KB)
Similar products
| Application | Polishing, Finishing, Scratch Removal, Lapping, Pre-CMP | ||
| Product Usage | Ultra-hard Substrates, Semiconductor Wafers | ||
| Substrate | Sapphire, Silicon Aluminum, Silicon Carbide, Silicon Nitride, Gallium Arsenide, Gallium Nitride, Lithium Tantalate |
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